参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance27 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time16 ns
Package / CasePowerFLAT-5x6-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time5 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
ImageSTMicroelectronics STL38DN6F7AG
SeriesSTL38DN6F7AG
BrandSTMicroelectronics
Pd - Power Dissipation57.7 W
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET LGS LV MOSFET
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541290095
Number of Channels2 Channel
Rise Time9 ns