参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage2 V
Transistor PolarityN-Channel
Id - Continuous Drain Current120 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time19 ns
Product CategoryMOSFET
ImageSTMicroelectronics STL190N4F7AG
Rds On - Drain-Source Resistance1.68 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
Maximum Operating Temperature+ 175 C
Package / CasePowerFLAT-5x6-8
PackagingCut Tape
PackagingReel
PackagingMouseReel
DescriptionMOSFET LGS LV MOSFET
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerSTMicroelectronics
Product TypeMOSFET
BrandSTMicroelectronics
Qg - Gate Charge41 nC
Factory Pack Quantity3000
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
SeriesSTL190N4F7AG
USHTS8541290095
Channel ModeEnhancement
Fall Time6.5 ns
Unit Weight0.002681 oz
CNHTS8541290000
Pd - Power Dissipation127 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time6.4 ns
Moisture Sensitivity Level1 (Unlimited)