参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current16 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time19 ns
Rds On - Drain-Source Resistance9.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
MXHTS85412999
Qg - Gate Charge45 nC
KRHTS8541299000
Package / CasePowerFLAT-5x6-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
Channel ModeEnhancement
Fall Time13 ns
PackagingReel
TARIC8541290000
Unit Weight0.002681 oz
SeriesSTL92N10F7AG
ImageSTMicroelectronics STL92N10F7AG
BrandSTMicroelectronics
Pd - Power Dissipation5 W
ManufacturerSTMicroelectronics
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET LGS LV MOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
TradenameSTripFET
Number of Channels1 Channel
Rise Time32 ns
Moisture Sensitivity Level1 (Unlimited)