STL45N10F7AG

厂牌：STMicroelectronics

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000048050902

描述：MOSFET N-CH 100V 18A POWERFLAT-5; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:72W; Transistor Case Style:PowerFLAT; No. of Pins:5Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current18 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time15 ns

Rds On - Drain-Source Resistance20 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time17 ns

MXHTS85412999

Qg - Gate Charge19.5 nC

Package / CasePowerFLAT-5x6-8

Mounting StyleSMD/SMT

JPHTS8541290100

Channel ModeEnhancement

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Fall Time5 ns

CNHTS8541210000

PackagingCut Tape

PackagingReel

PackagingMouseReel

TARIC8541290000

Unit Weight0.002681 oz

Pd - Power Dissipation72 W

SeriesSTL45N10F7AG

BrandSTMicroelectronics

ImageSTMicroelectronics STL45N10F7AG

Product TypeMOSFET

Factory Pack Quantity3000

SubcategoryMOSFETs

ManufacturerSTMicroelectronics

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Product CategoryMOSFET

Rise Time5.5 ns

TradenameSTripFET

USHTS8541290095

DescriptionMOSFET LGS LV MOSFET

Moisture Sensitivity Level1 (Unlimited)