参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current24 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time36 ns
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time68 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseTO-268-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageIXYS IXTT24P20
PackagingTube
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time28 ns
Factory Pack Quantity30
SeriesIXTT24P20
SubcategoryMOSFETs
Product CategoryMOSFET
BrandIXYS
Unit Weight0.158733 oz
DescriptionMOSFET 24 Amps 200V 11 Rds
Product TypeMOSFET
ManufacturerIXYS
USHTS8541290095
Pd - Power Dissipation300 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time29 ns
Moisture Sensitivity Level1 (Unlimited)