参数项参数值
参数项参数值
Forward Transconductance - Min26 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current26 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time25 ns
Width14 mm
Height5.1 mm
Rds On - Drain-Source Resistance270 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length16.05 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseTO-268-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageIXYS IXTT26N60P
TARIC8541290000
PackagingTube
RoHS Details
Channel ModeEnhancement
Fall Time21 ns
SeriesIXTT26N60
Factory Pack Quantity30
SubcategoryMOSFETs
Product CategoryMOSFET
BrandIXYS
Product TypeMOSFET
Unit Weight0.158733 oz
DescriptionMOSFET 26.0 Amps 600 V 0.27 Ohm Rds
ManufacturerIXYS
USHTS8541290095
Pd - Power Dissipation460 W
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time27 ns