JAN2N2222A

厂牌：Compensated Devices Inc. (CDI)

包装：BAG 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000048054218

描述：Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 BagBipolar Transistors - BJT

商品参数

参数项参数值

PackagingBulk

Package / CaseTO-206AA, TO-18-3 Metal Can

Mounting TypeThrough Hole

Transistor TypeNPN

Operating Temperature-65°C ~ 200°C (TJ)

Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA

Current - Collector Cutoff (Max)50nA

DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V

Frequency - Transition-

Supplier Device PackageTO-218

Part StatusActive

Current - Collector (Ic) (Max)800 mA

Voltage - Collector Emitter Breakdown (Max)50 V

Power - Max500 mW

Moisture Sensitivity Level1 (Unlimited)