参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2.8 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time0.6 ns
CNHTS8541290000
Rds On - Drain-Source Resistance90 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time4.2 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Qg - Gate Charge2.8 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG2302UKQ-7
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 8V-24V
Channel ModeEnhancement
Fall Time1.7 ns
USHTS8541210095
Unit Weight0.082453 oz
Pd - Power Dissipation1.1 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel