参数项参数值
参数项参数值
Forward Transconductance - Min2.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current690 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
JPHTS8541290100
Typical Turn-On Delay Time7 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time16 ns
RoHS Details
Package / CaseSOT-23-3
Factory Pack Quantity3000
ImageVishay Semiconductors SI2325DS-T1-E3
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
BrandVishay Semiconductors
DescriptionMOSFET -150V Vds 20V Vgs SOT-23
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge12 nC
MXHTS85412999
SeriesSI2
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.000282 oz
Fall Time11 ns
CNHTS8541290000
Part # AliasesSI2325DS-E3
Pd - Power Dissipation1.25 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time11 ns