CPH3456-TL-W

厂牌：onsemi

包装：Tape & Reel (TR) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000048105079

描述：MOSFET N-CH 20V 3.5A SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:1W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

商品参数

参数项参数值

Forward Transconductance - Min2.8 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage400 mV

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current3.5 A

MXHTS85412999

Vgs - Gate-Source Voltage- 12 V, + 12 V

Typical Turn-On Delay Time6.2 ns

KRHTS8541299000

Rds On - Drain-Source Resistance54 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time30 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

Package / CaseSOT-23-3

CAHTS8541290000

CNHTS8541290000

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Qg - Gate Charge2.8 nC

Factory Pack Quantity3000

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageON Semiconductor CPH3456-TL-W

BrandON Semiconductor

Product TypeMOSFET

TARIC8541290000

DescriptionMOSFET NCH 1.8V DRIVE SERIE

RoHS Details

Product CategoryMOSFET

SeriesCPH3456

ManufacturerON Semiconductor

SubcategoryMOSFETs

Channel ModeEnhancement

Fall Time28 ns

Unit Weight0.000282 oz

USHTS8541290095

Pd - Power Dissipation1 W

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time19 ns

Moisture Sensitivity Level1 (Unlimited)