参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min420
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
TARIC8541210000
RoHS Details
PackagingReel
SubcategoryTransistors
ImageInfineon Technologies BC850CWH6327XTSA1
BrandInfineon Technologies
Product TypeBJTs - Bipolar Transistors
SeriesBC850
ManufacturerInfineon
USHTS8541290095
Unit Weight0.000176 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Part # AliasesBC 850CW H6327 SP000747418
Pd - Power Dissipation330 mW
Moisture Sensitivity Level1 (Unlimited)