参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current67 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time16 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Width7.1 mm
MXHTS85412999
Height0.74 mm
Length9.15 mm
CNHTS8541290000
KRHTS8541299000
Qg - Gate Charge97 nC
Package / CaseDirectFET-L8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time12 ns
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandInfineon / IR
RoHS Details
Product CategoryMOSFET
ImageInfineon / IR IRF7779L2TRPBF
Unit Weight0.033010 oz
SubcategoryMOSFETs
Factory Pack Quantity4000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation125 W
USHTS8541290095
DescriptionMOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
Vds - Drain-Source Breakdown Voltage150 V
TradenameDirectFET
Number of Channels1 Channel
Rise Time19 ns
Moisture Sensitivity Level1 (Unlimited)