参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Width2.5 mm
Rds On - Drain-Source Resistance350 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time120 ns
Height1.5 mm
Length4.5 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingReel
PackagingCut Tape
PackagingMouseReel
SubcategoryMOSFETs
ImageROHM Semiconductor 2SK3065T100
Channel ModeEnhancement
BrandROHM Semiconductor
Fall Time70 ns
Product TypeMOSFET
ManufacturerROHM Semiconductor
USHTS8541290095
Unit Weight0.004938 oz
Factory Pack Quantity1000
Product CategoryMOSFET
DescriptionMOSFET N-CH 60V 2A
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time50 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)