参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current3.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.4 ns
Rds On - Drain-Source Resistance105 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time34 ns
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSO-8
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge17.2 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP6110SSD-13
Factory Pack Quantity2500
SeriesDMP6110
Product CategoryMOSFET
Product TypeMOSFET
Channel ModeEnhancement
Fall Time42 ns
Unit Weight0.002610 oz
Pd - Power Dissipation1.7 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time23 ns