参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current1.4 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541219000
Height1.1 mm
Length3.05 mm
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
Rds On - Drain-Source Resistance750 mOhms
Package / CaseTSOP-6
RoHS Details
Factory Pack Quantity3000
ImageVishay Semiconductors SI3437DV-T1-GE3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Width1.65 mm
TARIC8541290000
ManufacturerVishay
BrandVishay Semiconductors
DescriptionMOSFET -150V Vds 20V Vgs TSOP-6
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge12.2 nC
MXHTS85412101
SeriesSI3
Product TypeMOSFET
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.000705 oz
CNHTS8541210000
Part # AliasesSI3437DV-GE3
Pd - Power Dissipation3.2 W
TradenameTrenchFET
Number of Channels1 Channel