参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current27.2 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
KRHTS8541299000
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
RoHS Details
Rds On - Drain-Source Resistance4.5 mOhms
Package / CaseSO-8
Factory Pack Quantity2500
BrandVishay Semiconductors
ImageVishay Semiconductors SI4122DY-T1-GE3
TARIC8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
ManufacturerVishay
Product CategoryMOSFET
SubcategoryMOSFETs
Qg - Gate Charge95 nC
DescriptionMOSFET 40V Vds 25V Vgs SO-8
MXHTS85412999
Product TypeMOSFET
SeriesSI4
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006596 oz
CNHTS8541290000
Part # AliasesSI4122DY-GE3
Pd - Power Dissipation6 W
TradenameTrenchFET
Number of Channels1 Channel