参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time5.2 ns
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time33 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-223-3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge14 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
SubcategoryMOSFETs
ImageDiodes Incorporated DMP6185SEQ-13
Factory Pack Quantity2500
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 41V-60V
Channel ModeEnhancement
Fall Time39 ns
USHTS8541290095
Unit Weight9.876709 oz
Pd - Power Dissipation2.2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time23 ns
Moisture Sensitivity Level1 (Unlimited)