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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
MXHTS85412999
Width3.7 mm
Height1.65 mm
Length6.7 mm
KRHTS8541299000
Package / CaseSOT-223-4
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated BCP5116TA
TARIC8541290000
RoHS Details
Factory Pack Quantity1000
ManufacturerDiodes Incorporated
SeriesBCP51
Unit Weight0.003951 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation2000 mW
SubcategoryTransistors
USHTS8541290095