参数项参数值
参数项参数值
Forward Transconductance - Min71 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.35 V
TechnologySi
Id - Continuous Drain Current56 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance9.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge9.6 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time3.3 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon / IR IRFR3707ZTRPBF
Unit Weight0.139332 oz
Factory Pack Quantity2000
BrandInfineon / IR
Pd - Power Dissipation50 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time11 ns
TypeHEXFET Power MOSFET