参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage- 1 V
TechnologySi
Id - Continuous Drain Current- 3.6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance100 MOhms
Transistor Type2 P-Channel
Width3.9 mm
MXHTS85412999
Height1.75 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge16.7 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRF7306TRPBF
Unit Weight0.019048 oz
SubcategoryMOSFETs
Factory Pack Quantity4000
Product CategoryMOSFET
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation2 W
USHTS8541290095
DescriptionMOSFET MOSFT DUAL PCh -30V 3.6A
Vds - Drain-Source Breakdown Voltage- 30 V
Number of Channels2 Channel