参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time22 ns
Rds On - Drain-Source Resistance800 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time51 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge22 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
CNHTS8541290000
Factory Pack Quantity1000
BrandSTMicroelectronics
SeriesSTP10N95K5
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8541290000
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 950V .65Ohm typ 8A Zener-protected
ImageSTMicroelectronics STP10N95K5
Fall Time15 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.011640 oz
Pd - Power Dissipation130 W
USHTS8541290095
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage950 V
Number of Channels1 Channel
Rise Time14 ns