参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current4.9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance47 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
Width3.9 mm
Height1.75 mm
MXHTS85412999
Qg - Gate Charge38 nC
KRHTS8541299000
Package / CaseSO-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time22 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
SeriesFDS2572
BrandON Semiconductor / Fairchild
Unit Weight0.004586 oz
RoHS Details
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FDS2572
Product CategoryMOSFET
Pd - Power Dissipation2.5 W
Part # AliasesFDS2572_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
DescriptionMOSFET 150V N-Ch UltraFET Trench
Number of Channels1 Channel
Rise Time4 ns
TypeMOSFET