参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time9 ns
Width4.6 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22 ns
Height9.3 mm
Length10.4 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge13 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
CNHTS8541210000
BrandSTMicroelectronics
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Channel ModeEnhancement
SeriesSTF3N62K3
TARIC8541210000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET N-Ch, 620V-2.2ohms 2.7A
ImageSTMicroelectronics STF3N62K3
Fall Time15.6 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.011640 oz
USHTS8541290095
Pd - Power Dissipation45 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage620 V
Number of Channels1 Channel
Rise Time6.8 ns