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DMN31D5UFZ-7B

DMN31D5UFZ-7B

厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000048306066
描述：场效应管(MOSFET) DMN31D5UFZ-7B X2-DFN0606-3
最新价格近期成交10单+
数量价格（含税）
1¥0.8922
100¥0.6156
500¥0.5600
2500¥0.5189
5000¥0.4844
10000¥0.4444
库存：8,289交期：3-5Days起订：1增量：1
数量：
X
0.8922（单价）
合计：
￥0.89
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current220 mA
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time3.1 ns
MXHTS85412101
CNHTS8541210000
KRHTS8541299000
Rds On - Drain-Source Resistance4.5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseX2-DFN0606-3
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
Qg - Gate Charge350 pC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN31D5UFZ-7B
Factory Pack Quantity10000
SeriesDMN31
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W
Channel ModeEnhancement
Fall Time6.9 ns
USHTS8541290095
Unit Weight0.352740 oz
Pd - Power Dissipation393 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel