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PMV50ENEAR
厂牌：Nexperia(安世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000048306093
描述：MOSFET N-Ch 30V 3.9A Trench Auto TO236AB
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min12.5 S
ConfigurationSingle
Id - Continuous Drain Current3.9 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance30 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14.1 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6.3 ns
Mounting StyleSMD/SMT
Factory Pack Quantity3000
CNHTS8541210000
MXHTS85412101
KRHTS8541219000
Unit Weight0.000282 oz
Qg - Gate Charge10 nC
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Channel ModeEnhancement
Product TypeMOSFET
Product CategoryMOSFET
TARIC8541210000
ManufacturerNexperia
DescriptionMOSFET 30V N-CHANNEL
BrandNexperia
ImageNexperia PMV50ENEAR
Fall Time6.6 ns
RoHS Details
SubcategoryMOSFETs
Pd - Power Dissipation3.9 W
USHTS8541210075
Part # Aliases934068715215
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time17.3 ns