商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412101
CNHTS8541210000
Collector-Emitter Saturation Voltage200 mV
KRHTS8541219000
DC Collector/Base Gain hfe Min200 at 1 A, 5 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DSS30101L-7
Factory Pack Quantity3000
SeriesDSS30
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN SURFACE MT TRAN
USHTS8541210095
Unit Weight0.000282 oz
Pd - Power Dissipation600 mW
