参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current5.6 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance36 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541219000
Typical Turn-On Delay Time3 ns
Package / CaseSOT-23-3
ManufacturerNexperia
TARIC8541210000
MXHTS85412101
Product TypeMOSFET
Qg - Gate Charge3.6 nC
Mounting StyleSMD/SMT
CNHTS8541210000
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
RoHS Details
PackagingMouseReel
PackagingCut Tape
PackagingReel
BrandNexperia
ImageNexperia PMV37EN2R
Product CategoryMOSFET
DescriptionMOSFET 30V N-channel Trench MOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Unit Weight0.000282 oz
USHTS8541210075
Part # Aliases934068492215
Pd - Power Dissipation1.115 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time12 ns