IPD60R360P7SAUMA1

厂牌:Infineon(英飞凌)
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000048308475
描述:INFINEON - IPD60R360P7SAUMA1 - Power MOSFET, N Channel, 600 V, 9 A, 0.3 ohm, TO-252 (DPAK), Surface Mount 库存分布: SG: 0 UK: 3412; packSize: 1; minimumOrderQty: 1; rohs: YES
最新价格近期成交7单+
数量价格(含税)
1¥3.2223
100¥2.4889
1250¥2.1556
2500¥2.0556
库存:58交期:3-5Days起订:1增量:1
数量:
X
3.2223(单价)
合计:
¥3.22
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current9 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance300 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge13 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
Moisture SensitiveYes
CAHTS8541290000
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
Factory Pack Quantity2500
CNHTS8541290000
BrandInfineon Technologies
DescriptionMOSFET CONSUMER
Channel ModeEnhancement
Product TypeMOSFET
ImageInfineon Technologies IPD60R360P7SAUMA1
SeriesCoolMOS P7
ManufacturerInfineon
TARIC8541290000
Fall Time10 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.011993 oz
SubcategoryMOSFETs
Part # AliasesIPD60R360P7S SP001658166
Pd - Power Dissipation41 W
USHTS8541290095
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time7 ns