参数项参数值
参数项参数值
Forward Transconductance - Min0.25 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current180 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time2.8 ns
Rds On - Drain-Source Resistance10 Ohms
Typical Turn-Off Delay Time11.1 ns
Width1.3 mm
Height0.975 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541210000
Fall Time7.2 ns
CNHTS8541210000
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation310 mW
ImageDiodes Incorporated DMP510DL-13
SeriesDMP510
BrandDiodes Incorporated
Factory Pack Quantity10000
Product TypeMOSFET
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage50 V
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Number of Channels1 Channel
Rise Time2.6 ns
USHTS8541210095
DescriptionMOSFET P-Ch Enh Mode FET 310mW -50Vdss 30Vgss