参数项参数值
参数项参数值
DC Current Gain hFE Max-
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current-
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO4 V
Collector-Emitter Saturation Voltage0.25 V
DC Collector/Base Gain hfe Min100
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
ImagePanjit MMBTA06_R1_00001
Product CategoryBipolar Transistors - BJT
BrandPanjit
RoHS Details
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT /B06/TR/7"/HF/3K/SOT-23/TRA/SOT/GPT-03TN/GPT03-QI51/PJ///
SubcategoryTransistors
ManufacturerPanjit
Unit Weight0.000296 oz
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)