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IPD90N06S407ATMA2

IPD90N06S407ATMA2

厂牌：Infineon(英飞凌)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000048313870
描述：场效应管(MOSFET) IPD90N06S407ATMA2
最新价格近期成交11单+
数量价格（含税）
1¥5.3111
100¥4.4333
1250¥4.0333
2500¥3.8666
库存：10,665交期：3-5Days起订：1增量：1
数量：
X
5.3111（单价）
合计：
￥5.31
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current90 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Width6.22 mm
Rds On - Drain-Source Resistance6.9 mOhms
Transistor Type1 N-Channel
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge56 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingReel
CNHTS8541290000
Factory Pack Quantity2500
BrandInfineon Technologies
SeriesIPD90N06
Channel ModeEnhancement
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET MOSFET
TARIC8541290000
ManufacturerInfineon
ImageInfineon Technologies IPD90N06S407ATMA2
RoHS Details
Unit Weight0.139332 oz
SubcategoryMOSFETs
Part # AliasesIPD90N06S4-07 SP001028680
Pd - Power Dissipation79 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel