参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current14 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 55 C
CAHTS8542390000
Rds On - Drain-Source Resistance340 mOhms
Maximum Operating Temperature+ 150 C
ImageSTMicroelectronics STB17N80K5
Package / CaseTO-263-3
PackagingCut Tape
PackagingReel
Product CategoryMOSFET
DescriptionMOSFET PTD HIGH VOLTAGE
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge26 nC
BrandSTMicroelectronics
RoHS Details
MXHTS85423901
SubcategoryMOSFETs
SeriesSTB17N80K5
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.077603 oz
CNHTS8542390000
Pd - Power Dissipation170 W
TradenameMDmesh
Number of Channels1 Channel