参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width3.93 mm
Collector-Emitter Saturation Voltage1 V
Height4.7 mm
Length4.7 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleThrough Hole
Package / CaseTO-92-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
ImageON Semiconductor / Fairchild KSP2222ABU
PackagingBulk
SubcategoryTransistors
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
SeriesKSP2222A
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
Unit Weight0.007055 oz
USHTS8541210095
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN Si Transistor Epitaxial
Part # AliasesKSP2222ABU_NL
Pd - Power Dissipation625 mW