参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current3.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance4.91 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Width3.5 mm
Height1.6 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge6.7 nC
Package / CaseSOT-223-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 40 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time50 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
ImageInfineon Technologies IPN60R2K1CEATMA1
RoHS Details
Unit Weight0.008818 oz
SeriesCoolMOS CE
Factory Pack Quantity3000
Pd - Power Dissipation5 W
Product TypeMOSFET
BrandInfineon Technologies
Part # AliasesIPN60R2K1CE SP001434886
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET CONSUMER
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
TradenameCoolMOS
Number of Channels1 Channel
Rise Time7 ns