参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time23.7 ns
Rds On - Drain-Source Resistance1.2 Ohms
Typical Turn-Off Delay Time11.3 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Qg - Gate Charge13.4 nC
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
PackagingTube
ImageSTMicroelectronics STP7N80K5
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time20.2 ns
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
SeriesSTP7N80K5
Product CategoryMOSFET
Factory Pack Quantity1000
Unit Weight0.011640 oz
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET N-Ch 800V .95Ohm 6A MDmesh K5
Pd - Power Dissipation110 W
Vds - Drain-Source Breakdown Voltage800 V
TradenameMDmesh
Number of Channels1 Channel
Rise Time8.3 ns