参数项参数值
参数项参数值
Forward Transconductance - Min38 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.9 V
TechnologySi
Id - Continuous Drain Current60 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time6.2 ns
MXHTS85423999
Height1 mm
Rds On - Drain-Source Resistance9.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time6.5 ns
Length6 mm
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
Package / CaseVSONP-8
Minimum Operating Temperature- 55 C
Qg - Gate Charge3.9 nC
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8542399000
BrandTexas Instruments
RoHS Details
ImageTexas Instruments CSD16410Q5A
Factory Pack Quantity2500
ManufacturerTexas Instruments
SeriesCSD16410Q5A
Product CategoryMOSFET
Product TypeMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-Ch NexFET Power MOSFETs
Channel ModeEnhancement
Fall Time3.6 ns
Unit Weight0.003527 oz
USHTS8541290095
Pd - Power Dissipation3 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage25 V
Number of Channels1 Channel
Rise Time10.7 ns