参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min75 S
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current30 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time9 ns
ImageVishay / Siliconix SQJ486EP-T1_GE3
Product CategoryMOSFET
Rds On - Drain-Source Resistance22 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Maximum Operating Temperature+ 175 C
Package / CasePowerPAK-SO-8-4
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
BrandVishay / Siliconix
Factory Pack Quantity3000
Qg - Gate Charge34 nC
Product TypeMOSFET
SeriesSQ
ManufacturerVishay
RoHS Details
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time14 ns
Unit Weight0.017870 oz
Pd - Power Dissipation56 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage75 V
Number of Channels1 Channel
Rise Time11 ns