参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2 V
TechnologySi
Id - Continuous Drain Current- 40 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 P-Channel
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge120 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
PackagingTube
TARIC8541290000
ImageInfineon Technologies IRF5210PBF
RoHS Details
Unit Weight0.211644 oz
Factory Pack Quantity1000
Product TypeMOSFET
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFT PCh -100V -40A 60mOhm 120nC
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage- 100 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)