参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current80 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.7 ns
Rds On - Drain-Source Resistance8.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25.1 ns
Minimum Operating Temperature- 55 C
Package / CasePowerDI5060-8
CNHTS8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge30 nC
Factory Pack Quantity2500
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated DMT10H009SPS-13
BrandDiodes Incorporated
RoHS Details
TARIC8541290000
DescriptionMOSFET MOSFET BVDSS 61V-100V
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerDiodes Incorporated
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time17.3 ns
Unit Weight0.020715 oz
USHTS8541290095
Pd - Power Dissipation83 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time13.7 ns
Moisture Sensitivity Level1 (Unlimited)