参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current47.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
CNHTS8541290000
MXHTS85412999
Rds On - Drain-Source Resistance11 mOhms
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CasePowerDI5060-C-8
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Qg - Gate Charge40.2 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity2500
ImageDiodes Incorporated DMTH6010LPDQ-13
Product CategoryMOSFET
SeriesDMTH6010
DescriptionMOSFET MOSFET BVDSS: 41V-60V
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Unit Weight0.004092 oz
Pd - Power Dissipation37.5 W
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)