参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 80 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 4 V
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated MMBTA56Q-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
DescriptionBipolar Transistors - BJT PNP SS Trans 80Vceo 0.5A 0.3W
SeriesMMBTA56
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000282 oz
Pd - Power Dissipation310 mW
Moisture Sensitivity Level1 (Unlimited)