参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO4 V
MXHTS85412999
Width1.3 mm
Length2.9 mm
Height1 mm
KRHTS8541219000
Minimum Operating Temperature- 65 C
JPHTS8541290100
CNHTS8541210000
CAHTS8541290000
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageInfineon Technologies MMBTA 56 LT1
Factory Pack Quantity3000
BrandInfineon Technologies
TARIC8541290000
Product CategoryBipolar Transistors - BJT
SeriesMMBTA
RoHS Details
DescriptionBipolar Transistors - BJT AF GP BJT PNP 80V 0.5A
Product TypeBJTs - Bipolar Transistors
ManufacturerInfineon
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541210075
Part # AliasesMMBTA56LT1XT SP000011691 MMBTA56LT1HTSA1
Pd - Power Dissipation330 mW