参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 500 mA
TechnologySi
Minimum Operating Temperature- 55 C
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 4 V
QualificationAEC-Q101
ImageON Semiconductor SMMBTA56LT3G
Collector-Emitter Saturation Voltage- 0.25 V
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT SS DR XSTR SPCL TR
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min100
PackagingMouseReel
PackagingReel
PackagingCut Tape
Factory Pack Quantity10000
Mounting StyleSMD/SMT
RoHS Details
BrandON Semiconductor
ManufacturerON Semiconductor
SeriesMMBTA56L
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Unit Weight0.000282 oz
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)