参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 500 mA
TechnologySi
Minimum Operating Temperature- 55 C
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 4 V
QualificationAEC-Q101
ImageON Semiconductor SMMBTA56WT1G
Product CategoryBipolar Transistors - BJT
Collector-Emitter Saturation Voltage- 0.25 V
Maximum Operating Temperature+ 150 C
Package / CaseSC-70-3
DescriptionBipolar Transistors - BJT SS GP XSTR PNP 80V
DC Collector/Base Gain hfe Min100
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
RoHS Details
BrandON Semiconductor
Factory Pack Quantity3000
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SeriesMMBTA56W
SubcategoryTransistors
Unit Weight0.000176 oz
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)