参数项参数值
参数项参数值
Forward Transconductance - Min5.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current6 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18.4 ns
MXHTS85412101
CNHTS8541210000
Rds On - Drain-Source Resistance33 mOhms
KRHTS8541299000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time38.8 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Package / CaseDFN-2020-6
PackagingCut Tape
PackagingReel
PackagingMouseReel
Qg - Gate Charge23.2 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP4047LFDE-7
Factory Pack Quantity3000
SeriesDMP4047
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 31V-40 U-DFN2020-6 T&R 3K
Channel ModeEnhancement
Fall Time28.6 ns
USHTS8541290095
Unit Weight0.687842 oz
Pd - Power Dissipation700 mW
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time28.2 ns