参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width3.5 mm
Height1.6 mm
MXHTS85412999
Length6.5 mm
CNHTS8541290000
Collector-Emitter Saturation Voltage1 V
KRHTS8541219000
DC Collector/Base Gain hfe Min35
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-223-4
PackagingReel
PackagingCut Tape
PackagingMouseReel
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DZT2222A-13
Factory Pack Quantity2500
SeriesDZT2222
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 1W 40V
USHTS8541210075
Unit Weight0.009877 oz
Pd - Power Dissipation1 W
Moisture Sensitivity Level1 (Unlimited)