参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO- 20 V
Maximum DC Collector Current2.5 A
Collector- Emitter Voltage VCEO Max- 20 V
Continuous Collector Current- 2.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 145 mV
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 35 at 4 A, 2 V, 15 at 6 A, 2 V
Width2.5 mm
Height1.5 mm
Length4.5 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
SeriesFCX718
BrandDiodes Incorporated
ImageDiodes Incorporated FCX718TA
Pd - Power Dissipation2000 mW
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerDiodes Incorporated
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP Low Saturation