参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current20.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Width4.85 mm
Rds On - Drain-Source Resistance190 Ohms
Height16.15 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
MXHTS85412999
Length10.65 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge37 nC
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseTO-220-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageInfineon Technologies IPA60R190P6
TARIC8541290000
PackagingTube
RoHS Details
Channel ModeEnhancement
Fall Time7 ns
SeriesCoolMOS P6
SubcategoryMOSFETs
Factory Pack Quantity500
Product CategoryMOSFET
BrandInfineon Technologies
Product TypeMOSFET
Unit Weight0.211644 oz
DescriptionMOSFET HIGH POWER_PRC/PRFRM
ManufacturerInfineon
USHTS8541290095
Part # AliasesSP001017080 IPA60R190P6XKSA1
Pd - Power Dissipation34 W
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time8 ns