参数项参数值
参数项参数值
DC Current Gain hFE Max280
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO35 V
Collector- Emitter Voltage VCEO Max10 V
Continuous Collector Current5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage350 mV
DC Collector/Base Gain hfe Min60 at 20 A, 2 V
Width3.7 mm
Height1.65 mm
Length6.7 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.003951 oz
SeriesFZT104
BrandDiodes Incorporated
ImageDiodes Incorporated FZT1047ATA
ManufacturerDiodes Incorporated
Pd - Power Dissipation2.5 W
SubcategoryTransistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN High Gain & Crnt