参数项参数值
参数项参数值
DC Current Gain hFE Max100
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 20 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 5.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
Collector-Emitter Saturation Voltage- 440 mV
Width3.7 mm
Height1.65 mm
Length6.7 mm
DC Collector/Base Gain hfe Min75
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity1000
CNHTS8541290000
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT PNP HighCt Low Sat
ImageDiodes Incorporated FZT949TA
Product TypeBJTs - Bipolar Transistors
SeriesFZT949
ManufacturerDiodes Incorporated
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.003880 oz
SubcategoryTransistors
Pd - Power Dissipation3 W
USHTS8541290075